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M27W801
8 Mbit (1Mb x8) Low Voltage UV EPROM and OTP EPROM
s
2.7V to 3.6V SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: - 80ns at VCC = 3.0V to 3.6V - 100ns at VCC = 2.7V to 3.6V
32
s
32
s s
PIN COMPATIBLE with M27C801 LOW POWER CONSUMPTION: - 15A max Standby Current - 15mA max Active Current at 5MHz
1
1
FDIP32W (F)
PDIP32 (B)
s s
PROGRAMMING TIME 50s/byte HIGH RELIABILITY CMOS TECHNOLOGY - 2,000V ESD Protection - 200mA Latchup Protection Immunity
PLCC32 (K) TSOP32 (N) 8 x 20 mm
s
ELECTRONIC SIGNATURE - Manufacturer Code: 20h - Device Code: 42h Figure 1. Logic Diagram
DESCRIPTION The M27W801 is a low voltage 8 Mbit EPROM offered in the two ranges UV (ultra violet erase) and OTP (one time programmable). It is ideally suited for microprocessor systems requiring large data or program storage and is organized as 1,048,576 by 8 bits. The M27W801 operates in the read mode with a supply voltage as low as 2.7V at -40 to 85C temperature range. The decrease in operating power allows either a reduction of the size of the battery or an increase in the time between battery recharges. The FDIP32W (window ceramic frit-seal package) has a transparent lids which allow the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written to the device by following the programming procedure. For applications where the content is programmed only one time and erasure is not required, the M27W801 is offered in PDIP32, PLCC32 and TSOP32 (8 x 20 mm) packages.
VCC
20 A0-A19
8 Q0-Q7
E GVPP
M27W801
VSS
AI02363
April 2000
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M27W801
Figure 2A. DIP Connections Figure 2B. PLCC Connections
A19 A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 Q0 Q1 Q2 VSS
1 32 2 31 3 30 4 29 5 28 6 27 7 26 8 25 M27W801 9 24 10 23 11 22 12 21 13 20 14 19 15 18 16 17
AI02671
VCC A18 A17 A14 A13 A8 A9 A11 GVPP A10 E Q7 Q6 Q5 Q4 Q3
A7 A6 A5 A4 A3 A2 A1 A0 Q0
A12 A15 A16 A19 VCC A18 A17 1 32 A14 A13 A8 A9 A11 GVPP A10 E Q7 9 M27W801 25 17 VSS Q3 Q4 Q5 Q6
AI02365
Figure 2C. TSOP Connections
Table 1. Signal Names
A0-A19 Q0-Q7 Address Inputs Data Outputs Chip Enable Output Enable / Program Supply Supply Voltage Ground
A11 A9 A8 A13 A14 A17 A18 VCC A19 A16 A15 A12 A7 A6 A5 A4
1
32
8 9
M27W801 (Normal)
25 24
16
17
AI02366
GVPP A10 E Q7 Q6 Q5 Q4 Q3 VSS Q2 Q1 Q0 A0 A1 A2 A3
E GV PP VCC VSS
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Q1 Q2
M27W801
Table 2. Absolute Maximum Ratings (1)
Symbol TA TBIAS TSTG VIO (2) VCC VA9 (2) VPP Parameter Ambient Operating Temperature (3) Temperature Under Bias Storage Temperature Input or Output Voltage (except A9) Supply Voltage A9 Voltage Program Supply Voltage Value -40 to 125 -50 to 125 -65 to 150 -2 to 7 -2 to 7 -2 to 13.5 -2 to 14 Unit C C C V V V V
Note: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents. 2. Minimum DC voltage on Input or Output is -0.5V with possible undershoot to -2.0V for a period less than 20ns. Maximum DC voltage on Output is VCC +0.5V with possible overshoot to VCC +2V for a period less than 20ns. 3. Depends on range.
Table 3. Operating Modes
Mode Read Output Disable Program Program Inhibit Standby Electronic Signature
Note: X = VIH or VIL, VID = 12V 0.5V.
E VIL VIL V IL Pulse V IH V IH VIL
GVPP VIL VIH VPP VPP X VIL
A9 X X X X X VID
Q7-Q0 Data Out Hi-Z Data In Hi-Z Hi-Z Codes
Table 4. Electronic Signature
Identifier Manufacturer's Code Device Code A0 VIL VIH Q7 0 0 Q6 0 1 Q5 1 0 Q4 0 0 Q3 0 0 Q2 0 0 Q1 0 1 Q0 0 0 Hex Data 20h 42h
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M27W801
Table 5. AC Measurement Conditions
High Speed Input Rise and Fall Times Input Pulse Voltages Input and Output Timing Ref. Voltages 10ns 0 to 3V 1.5V Standard 20ns (10% to 90%) 0.4V to 2.4V 0.8V and 2V
Figure 3. AC Testing Input Output Waveform
Figure 4. AC Testing Load Circuit
1.3V
High Speed 3V 1.5V 0V DEVICE UNDER TEST 2.0V 0.8V
AI01822
1N914
3.3k
Standard 2.4V
OUT CL
0.4V
CL = 30pF for High Speed CL = 100pF for Standard CL includes JIG capacitance
AI01823B
Table 6. Capacitance (1) (TA = 25 C, f = 1 MHz)
Symbol C IN COUT Parameter Input Capacitance Output Capacitance Test Condition V IN = 0V VOUT = 0V Min Max 6 12 Unit pF pF
Note: 1. Sampled only, not 100% tested.
DEVICE OPERATION The operating modes of the M27W801 are listed in the Operating Modes table. A single power supply is required in the read mode. All inputs are TTL levels except for GVPP and 12V on A9 for Electronic Signature and Margin Mode Set or Reset. Read Mode The M27W801 has two control functions, both of which must be logically active in order to obtain data at the outputs. Chip Enable (E) is the power control and should be used for device selection. Output Enable (G) is the output control and should be used to gate data to the output pins, independent of device selection. Assuming that the addresses are stable, the address access time
(tAVQV) is equal to the delay from E to output (tELQV). Data is available at the output after a delay of t GLQV from the falling edge of G, assuming that E has been low and the addresses have been stable for at least tAVQV-tGLQV. Standby Mode The M27W801 has a standby mode which reduces the supply current from 15mA to 20A with low voltage operation VCC 3.6V, see Read Mode DC Characteristics table for details. The M27W801 is placed in the standby mode by applying a CMOS high signal to the E input. When in the standby mode, the outputs are in a high impedance state, independent of the GVPP input.
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M27W801
Table 7. Read Mode DC Characteristics (1) (TA = -40 to 85 C; VCC = 2.7V to 3.6V; VPP = VCC)
Symbol ILI ILO ICC ICC1 ICC2 IPP VIL VIH (2) VOL VOH Parameter Input Leakage Current Output Leakage Current Supply Current Supply Current (Standby) TTL Supply Current (Standby) CMOS Program Current Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage TTL IOL = 2.1mA IOH = -1mA 3.6 Test Condition 0V VIN V CC 0V VOUT VCC E = VIL, GVPP = VIL, IOUT = 0mA, f = 5MHz, V CC 3.6V E = VIH E > VCC - 0.2V, VCC 3.6V VPP = VCC -0.6 0.7 VCC Min Max 10 10 15 1 15 10 0.2 VCC VCC + 0.5 0.4 Unit A A mA mA A A V V V V
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after V PP. 2. Maximum DC voltage on Output is VCC +0.5V.
Two Line Output Control Because EPROMs are usually used in larger memory arrays, the product features a 2 line control function which accommodates the use of multiple memory connection. The two line control function allows: a. the lowest possible memory power dissipation, b. complete assurance that output bus contention will not occur. For the most efficient use of these two control lines, E should be decoded and used as the primary device selecting function, while G should be made a common connection to all devices in the array and connected to the READ line from the system control bus. This ensures that all deselected memory devices are in their low power standby mode and that the output pins are only active when data is required from a particular memory device.
System Considerations The power switching characteristics of Advanced CMOS EPROMs require careful decoupling of the devices. The supply current, I CC, has three segments that are of interest to the system designer: the standby current level, the active current level, and transient current peaks that are produced by the falling and rising edges of E. The magnitude of the transient current peaks is dependent on the capacitive and inductive loading of the device at the output. The associated transient voltage peaks can be suppressed by complying with the two line output control and by properly selected decoupling capacitors. It is recommended that a 0.1F ceramic capacitor be used on every device between VCC and VSS. This should be a high frequency capacitor of low inherent inductance and should be placed as close to the device as possible. In addition, a 4.7F bulk electrolytic capacitor should be used between VCC and VSS for every eight devices. The bulk capacitor should be located near the power supply connection point. The purpose of the bulk capacitor is to overcome the voltage drop caused by the inductive effects of PCB traces.
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M27W801
Table 8. Read Mode AC Characteristics (1) (TA = -40 to 85 C; VCC = 2.7V to 3.6V; VPP = VCC)
M27W801 Test Condition Min tAVQV tELQV tGLQV tEHQZ (2) tGHQZ (2) tAXQX tACC tCE tOE tDF tDF tOH Address Valid to Output Valid Chip Enable Low to Output Valid Output Enable Low to Output Valid Chip Enable High to Output Hi-Z Output Enable High to Output Hi-Z Address Transition to Output Transition E = VIL, G = VIL G = VIL E = VIL G = VIL E = VIL E = VIL, G = VIL 0 0 0 -100 (3) -120 (-150/-200)
Symbol
Alt
Parameter
Unit
VCC = 3.0V to 3.6V V CC = 2.7V to 3.6V VCC = 2.7V to 3.6V
Max 80 80 50 50 50
Min
Max 100 100 60
Min
Max 120 120 70 ns ns ns ns ns ns
0 0 0
60 60
0 0 0
70 70
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after V PP. 2. Sampled only, not 100% tested. 3. Speed obtained with High Speed AC measurement conditions.
Figure 5. Read Mode AC Waveforms
A0-A19
VALID tAVQV tAXQX
VALID
E tGLQV G tELQV Q0-Q7 tGHQZ Hi-Z tEHQZ
AI01583B
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M27W801
Table 9. Programming Mode DC Characteristics (1) (TA = 25 C; VCC = 6.25V 0.25V; VPP = 12.75V 0.25V)
Symbol ILI ICC IPP V IL VIH VOL VOH VID Parameter Input Leakage Current Supply Current Program Current Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage TTL A9 Voltage IOL = 2.1mA IOH = -1mA 3.6 11.5 12.5 E = VIL -0.3 2 Test Conditio n VIL VIN VIH Min Max 10 50 50 0.8 VCC + 0.5 0.4 Unit A mA mA V V V V V
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after V PP.
Table 10. MARGIN MODE AC Characteristics (1) (TA = 25 C; VCC = 6.25V 0.25V; VPP = 12.75V 0.25V)
Symbol tA9HVPH tVPHEL tA10HEH tA10LEH tEXA10X t EXVPX tVPXA9X Alt t AS9 tVPS tAS10 tAS10 tAH10 tVPH tAH9 Parameter VA9 High to VPP High VPP High to Chip Enable Low VA10 High to Chip Enable High (Set) VA10 Low to Chip Enable High (Reset) Chip Enable Transition to VA10 Transition Chip Enable Transition to VPP Transition VPP Transition to VA9 Transition Test Condition Min 2 2 1 1 1 2 2 Max Unit s s s s s s s
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after V PP.
Programming The M27W801 has been designed to be fully compatible with the M27C801 and has the same electronic signature. As a result the M27W801 can be programmed as the M27C801 on the same programming equipment applying 12.75V on VPP and 6.25V on VCC by the use of the same PRESTO IIB algorithm. When delivered (and after each `1's erasure for UV EPROM), all bits of the M27W801 are in the "1" state. Data is introduced by selectively programming "0"s into the desired bit locations.Al-
though only '0' will be programmed, both "1" and "0" can be present in the data word. The only way to change a `0' to a `1' is by die exposure to ultraviolet light (UV EPROM). The M27W801 is in the programming mode when VPP input is at 12.75V and E is pulsed to VIL. The data to be programmed is applied to 8 bits in parallel to the data output pins. The levels required for the address and data inputs are TTL. VCC is specified to be 6.25V 0.25V.
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M27W801
Table 11. Programming Mode AC Characteristics (1) (TA = 25 C; VCC = 6.25V 0.25V; VPP = 12.75V 0.25V)
Symbol tAVEL tQVEL tVCHEL tVPHEL tVPLVPH tELEH tEHQX tEHVPX tVPLEL tELQV tEHQZ (2) tEHAX Alt tAS tDS tVCS tOES tPRT tPW tDH tOEH tVR tDV tDFP tAH Parameter Address Valid to Chip Enable Low Input Valid to Chip Enable Low V CC High to Chip Enable Low V PP High to Chip Enable Low V PP Rise Time Chip Enable Program Pulse Width (Initial) Chip Enable High to Input Transition Chip Enable High to VPP Transition V PP Low to Chip Enable Low Chip Enable Low to Output Valid Chip Enable High to Output Hi-Z Chip Enable High to Address Transition 0 0 Test Condition Min 2 2 2 2 50 45 2 2 2 1 130 55 Max Unit s s s s ns s s s s s ns ns
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after V PP. 2. Sampled only, not 100% tested.
Figure 6. MARGIN MODE AC Waveforms
VCC
A8
A9 tA9HVPH GVPP tVPHEL E tA10HEH A10 Set tEXA10X tEXVPX tVPXA9X
A10 Reset tA10LEH
AI00736B
Note: A8 High level = 5V; A9 High level = 12V.
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M27W801
Figure 7. Programming and Verify Modes AC Waveforms
A0-A19 tAVEL Q0-Q7 tQVEL VCC tVCHEL GVPP tVPHEL E DATA IN
VALID tEHAX DATA OUT tEHQX tEHQZ
tEHVPX
tELQV
tVPLEL
tELEH
PROGRAM
VERIFY
AI01270
Figure 8. Programming Flowchart
VCC = 6.25V, VPP = 12.75V SET MARGIN MODE
n=0
E = 50s Pulse NO ++n = 25 YES NO VERIFY YES Last Addr NO ++ Addr
FAIL
YES RESET MARGIN MODE CHECK ALL BYTES 1st: VCC = 5V 2nd: VCC = 2.7V
AI01271C
PRESTO IIB Programming Algorithm PRESTO IIB Programming Algorithm allows the whole array to be programmed with a guaranteed margin, in a typical time of 52.5 seconds. This can be achieved with STMicroelectronics M27W801 due to several design innovations to improve programming efficiency and to provide adequate margin for reliability. Before starting the programming the internal MARGIN MODE circuit must be set in order to guarantee that each cell is programmed with enough margin. Then a sequence of 50s program pulses are applied to each byte until a correct verify occurs (see Figure 8). No overprogram pulses are applied since the verify in MARGIN MODE at VCC much higher than 3.6V, provides the necessary margin. Program Inhibit Programming of multiple M27W801s in parallel with different data is also easily accomplished. Except for E, all like inputs including GVPP of the parallel M27W801 may be common. A TTL low level pulse applied to a M27W801's E input, with VPP at 12.75V, will program that M27W801. A high level E input inhibits the other M27W801s from being programmed. Program Verify A verify (read) should be performed on the programmed bits to determine that they were correctly programmed. The verify is accomplished with G at V IL. Data should be verified with tELQV after the falling edge of E.
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M27W801
On-Board Programming The M27W801 can be directly programmed in the application circuit. See the relevant Application Note AN620. Electronic Signature The Electronic Signature (ES) mode allows the reading out of a binary code from an EPROM that will identify its manufacturer and type. This mode is intended for use by programming equipment to automatically match the device to be programmed with its corresponding programming algorithm. The ES mode is functional in the 25C 5C ambient temperature range that is required when programming the M27W801. To activate the ES mode, the programming equipment must force 11.5V to 12.5V on address line A9 of the M27W801. Two identifier bytes may then be sequenced from the device outputs by toggling address line A0 from VIL to VIH. All other address lines must be held at VIL during Electronic Signature mode. Byte 0 (A0 = VIL) represents the manufacturer code and byte 1 (A0 = V IH) the device identifier code. For the STMicroelectronics M27W801, these two identifier bytes are given in Table 4 and can be read-out on outputs Q7 to Q0. Note that the M27W801 and M27C801 have the same identifier byte. ERASURE OPERATION (applies to UV EPROM) The erasure characteristics of the M27W801 is such that erasure begins when the cells are exposed to light with wavelengths shorter than approximately 4000 A. It should be noted that sunlight and some type of fluorescent lamps have wavelengths in the 3000-4000 A range. Research shows that constant exposure to room level fluorescent lighting could erase a typical M27W801 in about 3 years, while it would take approximately 1 week to cause erasure when exposed to direct sunlight. If the M27W801 is to be exposed to these types of lighting conditions for extended periods of time, it is suggested that opaque labels be put over the M27W801 window to prevent unintentional erasure. The recommended erasure procedure for the M27W801 is exposure to short wave ultraviolet light which has wavelength 2537 A. The integrated dose (i.e. UV intensity x exposure time) for erasure should be a minimum of 30 W-sec/cm2. The erasure time with this dosage is approximately 30 to 40 minutes using an ultraviolet lamp with 12000 W/cm2 power rating. The M27W801 should be placed within 2.5 cm (1 inch) of the lamp tubes during the erasure. Some lamps have a filter on their tubes which should be removed before erasure.
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M27W801
Table 12. Ordering Information Scheme
Example: Device Type M27 Supply Voltage W = 2.7V to 3.6V Device Function 801 = 8 Mbit (1Mb x8) Speed -100 (1,2) = 80 ns -120 = 120 ns Not For New Design (3) -150 = 150 ns -200 = 200 ns Package F = FDIP32W (4) B = PDIP32 K = PLCC32 N = TSOP32: 8 x 20 mm (4) Temperature Range 6 = -40 to 85 C Optio ns TR = Tape & Reel Packing M27W801 -80 K 6 TR
Note: 1. 2. 3. 4.
High Speed, see AC Characteristics section for further information. This speed also guarantees 80ns access time at VCC = 3.0V to 3.6V. These speeds are replaced by the 120ns. Packages option available on request. Please contact STMicroelectronics local Sales Office.
For a list of available options (Speed, Package, etc...) or for further information on any aspect of this device, please contact the STMicroelectronics Sales Office nearest to you.
Table 13. Revision History
Date July 1999 First Issue FDIP32W Package Dimension, L Max added (Table 14) TSOP32 Package Dimension changed (Table 17) 0 to 70C Temperature Range deleted Programming Time changed Read Mode AC Characteristics: tAVQV, tELQV, tGLQV, tEHQZ, tGHQZ changed (Table 8) Revision Details
03/15/00
04/21/00
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M27W801
Table 14. FDIP32W - 32 pin Ceramic Frit-seal DIP, with window, Package Mechanical Data
Symb A A1 A2 A3 B B1 C D D2 E E1 e eA eB L S K K1 N 6.60 10.67 2.54 14.99 38.10 15.24 1.45 0.51 3.91 3.89 0.41 - 0.23 41.73 - - 13.06 - - 16.18 3.18 1.52 - - 4 32 mm Typ Min Max 5.72 1.40 4.57 4.50 0.56 - 0.30 42.04 - - 13.36 - - 18.03 4.10 2.49 - - 11 0.260 0.420 0.100 0.590 1.500 0.600 0.057 0.020 0.154 0.153 0.016 - 0.009 1.643 - - 0.514 - - 0.637 0.125 0.060 - - 4 32 Typ inches Min Max 0.225 0.055 0.180 0.177 0.022 - 0.012 1.655 - - 0.526 - - 0.710 0.161 0.098 - - 11
Figure 9. FDIP32W - 32 pin Ceramic Frit-seal DIP with window, Package Outline
A2
A3 A1 B1 B D2 D S
N
A L eA eB C
e1
K
1
E1
E
K1
FDIPW-b
Drawing is not to scale.
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M27W801
Table 15. PDIP32 - 32 pin Plastic DIP, 600 mils width, Package Mechanical Data
Symb Typ A A1 A2 B B1 C D D2 E E1 e1 eA eB L S N 2.54 15.24 38.10 15.24 1.52 mm Min - 0.38 3.56 0.38 - 0.20 41.78 - - 13.59 - - 15.24 3.18 1.78 0 32 Max 5.08 - 4.06 0.51 - 0.30 42.04 - - 13.84 - - 17.78 3.43 2.03 10 0.100 0.600 1.500 0.600 0.060 Typ inches Min - 0.015 0.140 0.015 - 0.008 1.645 - - 0.535 - - 0.600 0.125 0.070 0 32 Max 0.200 - 0.160 0.020 - 0.012 1.655 - - 0.545 - - 0.700 0.135 0.080 10
Figure 10. PDIP32 - 32 pin Plastic DIP, 600 mils width, Package Outline
A2 A1 B1 B D2 D S
N
A L eA eB C
e1
E1
1
E
PDIP
Drawing is not to scale.
13/16
M27W801
Table 16. PLCC32 - 32 lead Plastic Leaded Chip Carrier, Package Mechanical Data
Symb A A1 A2 B B1 D D1 D2 E E1 E2 e F R N Nd Ne CP 0.89 1.27 mm Typ Min 2.54 1.52 - 0.33 0.66 12.32 11.35 9.91 14.86 13.89 12.45 - 0.00 - 32 7 9 0.10 Max 3.56 2.41 0.38 0.53 0.81 12.57 11.56 10.92 15.11 14.10 13.46 - 0.25 - 0.035 0.050 Typ inches Min 0.100 0.060 - 0.013 0.026 0.485 0.447 0.390 0.585 0.547 0.490 - 0.000 - 32 7 9 0.004 Max 0.140 0.095 0.015 0.021 0.032 0.495 0.455 0.430 0.595 0.555 0.530 - 0.010 -
Figure 11. PLCC32 - 32 lead Plastic Leaded Chip Carrier, Package Outline D D1
1N
A1 A2
B1
Ne
E1 E
F 0.51 (.020)
D2/E2 B
e
1.14 (.045)
Nd
A R CP
PLCC
Drawing is not to scale.
14/16
M27W801
Table 17. TSOP32 - 32 lead Plastic Thin Small Outline, 8 x 20 mm, Package Mechanical Data
mm Symbol Typ A A1 A2 B C D D1 e E L CP N 32 0.500 0.050 0.950 0.150 0.100 19.800 18.300 - 7.900 0.500 0 Min Max 1.200 0.150 1.050 0.270 0.210 20.200 18.500 - 8.100 0.700 5 0.100 32 0.0197 0.0020 0.0374 0.0059 0.0039 0.7795 0.7205 - 0.3110 0.0197 0 Typ Min Max 0.0472 0.0059 0.0413 0.0106 0.0083 0.7953 0.7283 - 0.3189 0.0276 5 0.0039 inch
Figure 12. TSOP32 - 32 lead Plastic Thin Small Outline, 8 x 20 mm, Package Outline A2
1 N
e E B
N/2
D1 D
A CP
DIE
C
TSOP-a
A1
L
Drawing is not to scale.
15/16
M27W801
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in lif e support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (R) 2000 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A . http://w ww.st.com
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